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HANBit
HMF4M16J4V
Flash-ROM Module 8MByte (4Mx16bit), 68-pin JLCC type, 3.3V Design Part No. HMF4M16J4V GENERAL DESCRIPTION
The HMF4M16J4V is a high-speed flash read only memory (FROM) module containing 2,097,152 words organized in an x16bit configuration. The module consists of four 2M x 8bit FROM mounted on a 68-pin, JLCC connector FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. The host system can detect a program or erase operation is complete by observing the Ready Pin, or reading the DQ7(Data # Polling) and DQ6(Toggle) status bits. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single + 3V DC power supply and all inputs and outputs are LVTTLcompatible.
FEATURES
w Part identification - HMF4M16J4V (Bottom boot block configuration) w Access time: 70, 80, 90, 120ns w High-density 8MByte design w High-reliability, low-power design w Single + 3V to 3.6V power supply w 68-Pin JLCC Designed w Minimum 1,000,000 write cycle guarantee per sector w 20-year data retention at 125 oC w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume
PIN ASSIGNMENT
NC A18 A17 /WE0 /WE1 /CS0 /CS1 NC Vcc NC NC /OE NC A16 A15 A14 DQ15 A19 A20 NC Vss NC RY_BY Reset NC Vcc NC NC NC NC Vss NC NC NC
10 9 8 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 26 44 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43
OPTIONS
w Timing 70ns access 80ns access 90ns access 120ns access w Packages 68-pin JLCC
MARKING
- 70 - 80 - 90 -120
DQ14 DQ13 DQ12 Vss DQ11 DQ10 DQ9 DQ8 Vcc DQ7 DQ6 DQ5 DQ4 Vss DQ3 DQ2 DQ1
J
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NC A6 A5 A4 A3 A2 A1 A0 Vcc A13 A12 A11 A10 A9 A8 A7 DQ0
68-Pin JLCC TOP View
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FUNCTIONAL BLOCK DIAGRAM
A0-20 DQ0-15
HMF4M16J4V
DQ0-7
DQ8-15
A
/CE0 /CE /OE /WE /Reset /RY-BY
D
A
/CE /OE /WE /Reset /RY-BY
D
U1
U2
A
/CE1 /OE /WE0 /Reset /Ry-By /WE1 /CE /OE /WE /Reset /RY-BY
D
A
/CE /OE /WE /Reset /RY-BY
D
U3
U4
TRUTH TABLE
MODE STANDBY RESET SECTOR PROTECT SECTOR UNPROTECT READ WRITE /CS Vcc0.3V X L L L L /OE X X H H L H /WE X X L L H L RESET Vcc0.3V L VID VID H H DQ HIGH-Z HIGH-Z DIN, DOUT DIN, DOUT DOUT DOUT
Note : X means don't care, WE0* Low byte (D0~7) Write enable, W E1* High byte(D8~15) Write enable.
ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Output Short Circuit Current Storage Temperature RATING -0.5V to Vcc +0.5V -0.5V to +4.0V 1,600mA -65oC to +150oC
Operating Temperature -0oC to +70oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other condi tions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
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RECOMMENDED OPERATING CONDITIONS
PARAMETER Vcc for regulated Supply Voltage Vcc for full voltage
HMF4M16J4V
RANGE +3.0V to 3.6V +2.7V to 3.6V
DC AND OPERATING CHARACTERISTICS
PARAMETER Input Load Current Output Leakage Current Output High Voltage Output Low Voltage Vcc Active Read Current Vcc Active Write Current Vcc Standby Current Vcc Reset Current Low Vcc Lock-Out Voltage TEST CONDITIONS VIN= VSS to VCC , VCC= VCC max VOUT= VSS to VCC, VCC= VCC max IOH = -2.0mA, Vcc = Vcc min IOL = 4.0mA, Vcc = Vcc min /CE = VIL, ,/OE=VIH, f=5MHz /CE = VIL, /OE=VIH /CE, RESET=VCC0.3V /RESET=Vss0.3V, SYMBOL IL1 IL0 VOH VOL ICC1 ICC2 ICC3 ICC4 VLKO 2.3 0.85Vcc 0.45 128 240 40 40 2.5 MIN MAX 8.0 8.0 UNITS A A V V mA mA A A V
ERASE AND PROGRAMMING PERFORMANCE
LIMITS PARAMETER MIN. Sector Erase Time TYP. 0.7 MAX. Excludes 00H programming 15 Sec prior to erasure Byte Programming Time 9 300 S Excludes system-level overhead Excludes system-level Chip Programming Time 18 54 sec overhead UNIT COMMENTS
TSOP PIN CAPACITANCE
PARAMETER SYMBOL CIN Capacitance COUT CIN2 Output Capacitance Control Pin Capacitance /CE /WE /OE Notes: Test conditions TA = 25o C, f=1.0 MHz. Data VOUT = 0 VIN = 0 PARAMETER DESCRIPTION Input Address VIN = 0 24 8.5 7.5 30 60 30 12 9 36 72 pF pF TEST SETUP TYP. 48 MAX 60 pF UNIT
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AC CHARACTERISTICS u Read Only Operations Characteristics
PARAMETER SYMBOLS JEDEC STANDARD tAVAV tAVQV tRC tACC Address to Output Delay /OE = VIL tELQV tGLQV tEHQZ tGHQZ tAXQX tCE tOE tDF tDF tQH /CE or /OE, Whichever Occurs First Chip Enable to Output Delay Chip Enable to Output Delay Chip Enable to Output High-Z Output Enable to Output High-Z Output Hold Time From Addresses, Min /OE = VIL Max Max Max Max DESCRIPTION TEST SETUP
HMF4M16J4V
-80 (NOTE1) 80 80 80 80 25 25 0
-90 (NOTE1) 90 90 90 90 30 30 0
UNIT
Read Cycle Time /CE = V IL
Min Max
ns ns ns ns ns ns ns
TEST CONDITIONS
Notes : Test Conditions : Output Load : 1TTL gate and 100 pF Input rise and fall times : 5 ns Input pulse levels: 0V to 3.0V Timing measurement reference level Input : 1.5 V Output : 1.5V
3.3V
2.7k Device Under Test CL IN3064 or Equivalent
6.2k
Diodes = IN3064 or Equivalent
Note : CL = 100pF including jig capacitance
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u Erase/Program Operations
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX STANDARD tWC tAS tAH tDS tDH tOES tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS tRB tBUSY Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /CE Setup Time /CE Hold Time Write Pulse Width Write Pulse Width High Byte Programming Operation Sector Erase Operation Max Vcc Setup Time Recovery time from RY/BY Program/Erase Valid to RY/BY Delay Min Min Min Min Min Min Min Min Min Min Min Min Min Min Typ Typ
HMF4M16J4V
-80 80 0 45 35 0 0 0 0 0 35 30 9 0.7 50 50 0 90
-90 90 0 45 45 0 0 0 0 0 35 30 9 0.7 50 50 0 90
UNIT ns ns ns ns ns ns ns ns ns ns ns s sec sec s s s
u Alternate /CE Controlled Erase/Program Operations
PARAMETER SYMBOLS DESCRIPTION JEDEC tAVAV tAVEL tELAX tDVEH tEHDX STANDARD tWC tAS tAH tDS tDH tOES tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2 Write Cycle Time Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recover Time Before Write /OE High to /WE Low /WE Setup Time /WE Hold Time /CE Pulse Width /CE Pulse Width High Byte Programming Operation Sector Erase Operation Min Min Min Min Min Min Min Min Min Min Min Typ Typ 80 0 45 35 0 0 0 0 0 35 30 9 0.7 90 0 45 45 0 0 0 0 0 35 30 9 0.7 ns ns ns ns ns ns ns ns ns ns ns s sec -80 -90 UNIT
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u READ OPERATIONS TIMING
HMF4M16J4V
u RESET TIMING
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u PROGRAM OPERATIONS TIMING
HMF4M16J4V
u CHIP/SECTOR ERASE OPERATION TIMINGS
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u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF4M16J4V
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
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u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF4M16J4V
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
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PACKAGE DIMENSIONS
UNIT: inch(mm) (TOP Dimension)
HMF4M16J4V
0.460.20mm
1.2780.20mm
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ORDERING INFORMATION
Part Number Density Org. Package
HMF4M16J4V
Component Number 4EA 4EA 4EA 4EA
Vcc
SPEED
HMF4M16J4V-70 HMF4M16J4V -80 HMF4M16J4V -90 HMF4M16J4V -120
8MByte 8MByte 8MByte 8MByte
x 16
68Pin -JLCC 68Pin -JLCC 68Pin -JLCC 68Pin -JLCC
3.3V 3.3V 3.3V 3.3V
70ns 80ns 90ns 120ns
x 16 x 16 x 16
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